DMN2114SN new product n-channel enhancement mode field effect transistor features ? low on-resistance ? ideal for notebook computer, portable phone, pcmcia cards, and battery power circuits ? lead free by design/rohs compliant (note 2) ? qualified to aec-q101 standards for high reliability ? esd protected gate ? "green" device (note 3) mechanical data ? case: sc59 ? case material - molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 20 v gate-source voltage continuous v gss 12 v drain current continuous pulsed i d 1.2 4.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation p d 500 mw thermal resistance, junction to ambient r ja 250 c /w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 1) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @ t j = 25c i dss ? ? 10 a v ds = 24v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 1) gate threshold voltage v gs ( th ) 0.7 ? 1.40 v v ds = 10v, i d = 1.0ma static drain-source on-resistance r ds (on) ? ? ? ? 0.100 0.160 v gs = 4.5v, i d = 0.5a v gs = 2.5v, i d = 0.5a forward transfer admittance |y fs | ? 3.3 ? s v ds = 10v, i d = 0.5a diode forward voltage v sd ? 0.8 1.1 v v gs = 0v, i s = 1.0a dynamic characteristics input capacitance c iss ? 180 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 120 ? pf reverse transfer capacitance c rss ? 45 ? pf switching characteristics turn-on delay time t d ( on ) ? 10 ? ns v dd = 10v, i d = 0.5a, v gs = 5.0v, r gen = 50 turn-off delay time t d ( off ) ? 50 ? ns turn-on rise time t r ? 15 ? ns turn-off fall time t f ? 45 ? ns notes: 1. pulse width 300 s, duty cycle 2%. 2. no purposefully added lead. sc-59 top view internal schematic top view esd protected source gate protection diode gate drain d g s product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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